Viewing posts from February, 2020

Low Frequency Noise In InGaAs Heterojunction FETs

InGaAs heterojunction FETs are magic parts—fast, strong, and extremely quiet.  They're also called pseudomorphic high electron-mobility transistors (pHEMTs), because they use a 2D quantum well to to force the conduction electrons to move in a plane without much scattering.  My fave Avago ATF38143 pHEMT was discontinued, but luckily Mini-Circuits stepped into the breach with their very nice SAV-551+ and its siblings, which are similar enough that the ATF SPICE model can be hacked up to work with them.  (RF companies like Mini-Circuits never seem to supply SPICE models for some reason.)  In one post on the 'purpose of precision' thread on sci.electronics.design, I noted that the Avago ATF38143 model I had posted awhile back predicted way, way too much low frequency noise. The real pHEMTs tend to have a pretty accurately 1/f PSD with corner frequencies between 10 and 50 MHz and flatband noise of around 0.3 nV/√Hz, about 10 dB quieter than the best JFETs, as well as being 20 times faster.